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TC58BVG0S3HBAI4 IC FLASH 1GBIT PARALLEL 63TFBGA Kioxia America, Inc.
| Brand Name | Kioxia America, Inc. |
|---|---|
| Model Number | TC58BVG0S3HBAI4 |
| Minimum Order Quantity | 1 |
| Price | Based on current price |
| Packaging Details | anti-static bag & cardboard box |
| Delivery Time | 3-5 work days |
| Payment Terms | T/T |
| Supply Ability | In stock |
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xProduct Details
| Memory Type | Non-Volatile | Memory Format | FLASH |
|---|---|---|---|
| Technology | FLASH - NAND (SLC) | Memory Size | 1Gbit |
| Memory Organization | 128M X 8 | Memory Interface | Parallel |
| Clock Frequency | - | Write Cycle Time - Word, Page | 25ns |
| Access Time | 25 Ns | Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) | Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA | Supplier Device Package | 63-TFBGA (9x11) |
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| Part Number | Description | |
|---|---|---|
| TC58BVG0S3HBAI4 | IC FLASH 1GBIT PARALLEL 63TFBGA | |
| TH58BYG2S3HBAI4 | IC FLASH 4GBIT 63TFBGA | |
| TH58BVG2S3HBAI4 | IC FLASH 4GBIT 63TFBGA | |
| TC58BYG2S0HBAI4 | IC FLASH 4G PARALLEL 63TFBGA | |
| TH58NYG2S3HBAI4 | IC FLASH 4GBIT PARALLEL 63BGA | |
| TH58NYG3S0HBAI4 | IC FLASH 8GBIT PARALLEL 63TFBGA | |
| TC58BYG0S3HBAI4 | IC FLASH 1GBIT 63TFBGA | |
| TH58NVG2S3HBAI6 | IC FLASH 4GBIT PARALLEL 63BGA | |
| TH58NYG2S3HBAI6 | IC FLASH 4GBIT PARALLEL 63BGA | |
| TH58BYG3S0HBAI4 | IC FLASH 8GBIT PARALLEL 63TFBGA | |
| TC58BVG2S0HBAI4 | IC FLASH 4GBIT PARALLEL 63TFBGA | |
| TC58NVG0S3HBAI4 | IC FLASH 1GBIT PARALLEL 63TFBGA | |
| TC58NVG1S3HBAI4 | IC FLASH 2GBIT PARALLEL 63TFBGA | |
| TC58NVG2S0HBAI4 | IC FLASH 4GBIT PARALLEL 63TFBGA | |
| TC58BVG1S3HBAI4 | IC FLASH 2GBIT 63TFBGA | |
| TC58BYG1S3HBAI4 | IC FLASH 2GBIT 63TFBGA | |
| TC58NYG1S3HBAI4 | IC FLASH 2GBIT 63TFBGA | |
| TC58NYG2S0HBAI4 | IC FLASH 4GBIT 63TFBGA | |
| TH58NVG3S0HBAI4 | IC FLASH 8GBIT PARALLEL 63TFBGA | |
| TH58NVG2S3HBAI4 | IC FLASH 4GBIT PARALLEL 63BGA |
Product Description
Product Details
85 ºC, High Ripple, General Purpose Capacitor
Type TC is an axial leaded, 85 ºC, 1000 hour long life general purpose aluminum electrolytic capacitor with a high ripple current rating and is suitable for consumer electronic equipment applications.
Highlights
• General purpose• High ripple current
• Low profile mounting
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Product Category | Memory ICs |
| Series | Benand™ |
| Packaging | Tray |
| Package-Case | 63-VFBGA |
| Operating-Temperature | -40°C ~ 85°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 2.7 V ~ 3.6 V |
| Supplier-Device-Package | 63-TFBGA (9x11) |
| Memory Capacity | 1G (128M x 8) |
| Memory-Type | EEPROM - NAND |
| Speed | 25ns |
| Format-Memory | EEPROMs - Serial |
Descriptions
FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parallel 25ns 63-TFBGA (9x11)
SLC NAND Flash Parallel 3.3V 1G-bit
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
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