Stable 85MHZ Flash Memory IC 16MBIT SPI 8SOIC AT45DB161E-SHD-T

Brand Name Renesas Design Germany GmbH
Model Number AT45DB161E-SHD-T
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH Memory Size 16Mbit
Memory Organization 528 Bytes X 4096 Pages Memory Interface SPI
Clock Frequency 85 MHz Write Cycle Time - Word, Page 8µs, 4ms
Access Time - Voltage - Supply 2.5V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TC) Mounting Type Surface Mount
Package / Case 8-SOIC (0.209", 5.30mm Width) Supplier Device Package 8-SOIC
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Stable Flash Memory IC

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AT45DB161E-SHD-T

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Product Description

AT45DB161E-SHD-T IC FLASH 16MBIT SPI 85MHZ 8SOIC Renesas Design Germany GmbH

Product Details

 

Description

The Atmel AT45DB161E is a 2.3V or 2.5V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB161E also supports RapidS serial interface for applications requiring very high speed operation. Its 17,301,504 bits of memory are organized as 4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB161E also contains two SRAM buffers of 512/528 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pademory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.

 

 

Features

 Single 2.3V - 3.6V or 2.5V - 3.6V supply
 Serial Peripheral Interface (SPI) compatible
 Supports SPI modes 0 and 3
 Supports Atmel® RapidS™ operation
 Continuous Read capability through entire array
 Up to 85MHz
 Low-power Read option up to 10MHz
 Clock-to-output time (tV) of 6ns maximum
 User configurable page size
 512 bytes per page
 528 bytes per page (default)
 Page size can be factory pre-configured for 512 bytes
 Two fully independent SRAM data buffers (512/528 bytes)
 Allows receiving data while reprogramming the Main Memory Array
 Flexible programming options
 Byte/Page program (1 to 512/528 bytes) directly into main memory
 Buffer Write
 Buffer to Main Memory Page Program
 Flexible Erase options
 Page Erase (512/528 bytes)
 Block Erase (4KB)
 Sector Erase (128KB)
 Chip Erase (16-Mbits)
 Program and Erase Suspend/Resume
 Advanced hardware and software data protection features
 Individual sector protection
 Individual sector lockdown to make any sector permanently read-only
 128-byte, One-Time Programmable (OTP) Security Register
 64 bytes factory programmed with a unique identifier
 64 bytes user programmable
 Software controlled reset
 JEDEC Standard Manufacturer and Device ID Read
 Low-power dissipation
 500nA Ultra-Deep Power-Down current (typical)
 3μA Deep Power-Down current (typical)
 25μA Standby current (typical)
 11mA Active Read current (typical)
 Endurance: 100,000 program/erase cycles per page minimum
 Data retention: 20 years
 Complies with full industrial temperature range
 Green (Pb/Halide-free/RoHS compliant) packaging options
 8-lead SOIC (0.150" wide)
 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
 9-ball Chip-scale BGA (5 x 5 x 1.2mm)

 

Specifications

Attribute Attribute Value
Manufacturer ADESTO
Product Category Memory ICs
Series AT45DB
Packaging Tube
Unit-Weight 0.019048 oz
Mounting-Style SMD/SMT
Operating-Temperature-Range - 40 C to + 85 C
Package-Case 8-SOIC (0.209", 5.30mm Width)
Operating-Temperature -40°C ~ 85°C (TC)
Interface SPI, RapidS
Voltage-Supply 2.5 V ~ 3.6 V
Supplier-Device-Package 8-SOIC
Memory Capacity 16M (4096 pages x 528 bytes)
Memory-Type DataFLASH
Speed 85MHz
Architecture Chip Erase
Format-Memory FLASH
Interface-Type SPI
Organization 2 M x 8
Supply-Current-Max 22 mA
Data-Bus-Width 8 bit
Supply-Voltage-Max 3.6 V
Supply-Voltage-Min 2.5 V
Package-Case SOIC-8
Maximum-Clock-Frequency 70 MHz
Timing-Type Synchronous
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
SST25VF016B-50-4I-QAF
Memory
16M X 1 FLASH 2.7V PROM, DSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8 Microchip Technology Inc AT45DB161E-SHD-T vs SST25VF016B-50-4I-QAF
SST26VF016B-104I/SM
Memory
IC FLASH 2.7V PROM, Programmable ROM Microchip Technology Inc AT45DB161E-SHD-T vs SST26VF016B-104I/SM
SST25VF016B-75-4I-S2AF
Memory
16M X 1 FLASH 2.7V PROM, PDSO8, 5.20 X 8 MM, ROHS COMPLIANT, EIAJ, SOIC-8 Microchip Technology Inc AT45DB161E-SHD-T vs SST25VF016B-75-4I-S2AF
AT45DB161E-SSHD-T
Memory
Flash, 16MX1, PDSO8, 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8 Adesto Technologies Corporation AT45DB161E-SHD-T vs AT45DB161E-SSHD-T
AT45DB161E-SHD-B
Memory
Flash, 16MX1, PDSO8, 0.208 INCH, GREEN, PLASTIC, SOIC-8 Adesto Technologies Corporation AT45DB161E-SHD-T vs AT45DB161E-SHD-B
AT45DB161E-SSHD-B
Memory
Flash, 16MX1, PDSO8, 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8 Adesto Technologies Corporation AT45DB161E-SHD-T vs AT45DB161E-SSHD-B
AT45DB161D-SU
Memory
Flash, 16MX1, PDSO8, 0.209 INCH, GREEN, PLASTIC, EIAJ, SOIC-8 Atmel Corporation AT45DB161E-SHD-T vs AT45DB161D-SU
SST25VF016B-50-4I-S2AF
Memory
16M X 1 FLASH 2.7V PROM, PDSO8, 5.20 X 8 MM, ROHS COMPLIANT, EIAJ, SOIC-8 Microchip Technology Inc AT45DB161E-SHD-T vs SST25VF016B-50-4I-S2AF
SST25VF016B-50-4C-S2AF
Memory
16M X 1 FLASH 2.7V PROM, PDSO8, 5.20 X 8 MM, ROHS COMPLIANT, EIAJ, SOIC-8 Microchip Technology Inc AT45DB161E-SHD-T vs SST25VF016B-50-4C-S2AF

Descriptions

FLASH Memory IC 16Mb (528 Bytes x 4096 pages) SPI 85MHz 8-SOIC
NOR Flash Serial-SPI 3.3V 16M-bit 6ns 8-Pin SOIC EIAJ T/R
Flash Memory 16M 2.5-3.6V 85Mhz Data Flash