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S29CD016J0MFAM010 IC FLASH 16MBIT PAR 56MHZ 80FBGA Infineon Technologies
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xProduct Details
| Memory Type | Non-Volatile | Memory Format | FLASH |
|---|---|---|---|
| Technology | FLASH - NOR | Memory Size | 16Mbit |
| Memory Organization | 512K X 32 | Memory Interface | Parallel |
| Clock Frequency | 56 MHz | Write Cycle Time - Word, Page | 60ns |
| Access Time | 54 Ns | Voltage - Supply | 1.65V ~ 2.75V |
| Operating Temperature | -40°C ~ 125°C (TA) | Mounting Type | Surface Mount |
| Package / Case | 80-LBGA | Supplier Device Package | 80-FBGA (13x11) |
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| Part Number | Description | |
|---|---|---|
| S29CD016J0MFAM010 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
| S29CD016J0MFAM113 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
| S29CD016J0JFAM010 | IC FLASH 16MBIT PAR 80FBGA | |
| S29CD016J0PFAM010 | IC FLASH 16MBIT PARALLEL 80FBGA | |
| S29CD016J0MFAM013 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
| S29CL016J1MFFM030 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
| S29CD032J1JFFM010 | IC FLASH 32MBIT PAR 80FBGA | |
| S29CD016J0PFAM010 | IC FLASH 16MBIT PARALLEL 80FBGA | |
| S29CL032J0RFFM010 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | |
| S29CD016J0MFAM012 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
| S29CD016J0PFFM113 | IC FLASH 16MBIT PARALLEL 80FBGA | |
| S29CD032J0RFAM033 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | |
| S29CL016J0PFFM033 | IC FLASH 16MBIT PARALLEL 80FBGA | |
| S29CL032J0RFFM033 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | |
| S29CD016J0PFFI000 | IC FLASH 16MBIT PARALLEL 80FBGA | |
| S29CD016J0PFFM110 | IC FLASH 16MBIT PARALLEL 80FBGA | |
| S29CD032J0PFFI010 | IC FLASH 32MBIT PARALLEL 80FBGA | |
| S29CD032J0PFFM010 | IC FLASH 32MBIT PARALLEL 80FBGA | |
| S29CD032J0RFAM010 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | |
| S29CD032J0RFAM030 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | |
| S29CD032J1JFAM010 | IC FLASH 32MBIT PAR 80FBGA | |
| S29CL032J0MFAI030 | IC FLASH 32MBIT PAR 56MHZ 80FBGA | |
| S29CL032J0PFFM000 | IC FLASH 32MBIT PARALLEL 80FBGA | |
| S29CD016J1MFAM112 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
| S29CL016J0PFFM030 | IC FLASH 16MBIT PARALLEL 80FBGA |
Product Description
Product Details
General Description
The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O™ manufactured on 170 nm Process Technology.
Distinctive Characteristics
Architecture Advantages■ Simultaneous Read/Write operations
— Read data from one bank while executing erase/
program functions in other bank
— Zero latency between read and write operations
— Two bank architecture: large bank/small bank
75%/25%
■ User-Defined x32 Data Bus
■ Dual Boot Block
— Top and bottom boot sectors in the same device
■ Flexible sector architecture
— CD032G: Eight 2K Double Word, Sixty-two 16K
Double Word, and Eight 2K Double Word sectors
— CD016G: Eight 2K Double Word, Thirty-two 16K
Double Word, and Eight 2K Double Word sectors
■ Secured Silicon Sector (256 Bytes)
— Factory locked and identifiable: 16 bytes for secure,
random factory Electronic Serial Number; Also know
as Electronic Marking
■ Manufactured on 170 nm Process Technology
■ Programmable Burst interface
— Interfaces to any high performance processor
— Linear Burst Read Operation: 2, 4, and 8 double
word linear burst with or without wrap around
■ Program Operation
— Performs synchronous and asynchronous write
operations of burst configuration register settings
independently
■ Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
■ Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD/Fujitsu Am29LV/
MBM29LV and Am29F/MBM29F flash memories
Performance Characteristics
■ High performance read access— Initial/random access times of 48 ns (32 Mb) and 54
ns (16 Mb)
— Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
■ Ultra low power consumption
— Burst Mode Read: 90 mA @ 75 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 µA max
■ 1 million write cycles per sector typical
■ 20 year data retention typical
■ VersatileI/O™ control
— Generates data output voltages and tolerates data
input voltages as determined by the voltage on the
VIO pin
— 1.65 V to 3.60 V compatible I/O signals
Software Features
■ Persistent Sector Protection— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector (requires only VCC levels)
■ Password Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector using a user-definable 64-bit
password
■ Supports Common Flash Interface (CFI)
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardware Features
■ Program Suspend/Resume & Erase Suspend/Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
■ Hardware Reset (RESET#), Ready/Busy# (RY/
BY#), and Write Protect (WP#) inputs
■ ACC input
— Accelerates programming time for higher throughput
during system production
■ Package options
— 80-pin PQFP
— 80-ball Fortified BGA
— Pb-free package option also available
— Known Good Die
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Cypress Semiconductor |
| Product Category | Memory ICs |
| Series | CD-J |
| Type | Boot Block |
| Packaging | Tray |
| Mounting-Style | SMD/SMT |
| Operating-Temperature-Range | - 40 C to + 125 C |
| Package-Case | 80-LBGA |
| Operating-Temperature | -40°C ~ 125°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 1.65 V ~ 2.75 V |
| Supplier-Device-Package | 80-Fortified BGA (13x11) |
| Memory Capacity | 16M (512K x 32) |
| Memory-Type | FLASH - NOR |
| Speed | 56MHz |
| Architecture | Sector |
| Format-Memory | FLASH |
| Standard | Common Flash Interface (CFI) |
| Interface-Type | Parallel |
| Organization | 512 k x 32 |
| Supply-Current-Max | 90 mA |
| Data-Bus-Width | 32 bit |
| Supply-Voltage-Max | 2.75 V |
| Supply-Voltage-Min | 2.5 V |
| Package-Case | FBGA-80 |
| Maximum-Clock-Frequency | 56 MHz |
| Timing-Type | Asynchronous Synchronous |
| Manufacturer Part# | Description | Manufacturer | Compare |
| S29CD016J1JFFM112 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM112 |
| S29CD016J0JFFI013 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0JFFI013 |
| S29CD016J1JFFM113 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM113 |
| S29CD016J1JFFM032 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM032 |
| S29CD016J0MFFM133 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFM133 |
| S29CD016J1JFFM030 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM030 |
| S29CD016J0JFFI010 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0JFFI010 |
| S29CD016J0MFFM130 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFM130 |
| S29CD016J0MFFI033 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFI033 |
| S29CD016J0MFFM132 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFM132 |
Descriptions
FLASH - NOR Memory IC 16Mb (512K x 32) Parallel 56MHz 54ns 80-FBGA (13x11)
NOR Flash Parallel 2.6V 16M-bit 512K x 32 54ns Automotive 80-Pin Fortified BGA Tray
Flash Memory
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