W9812G6KH-6 IC DRAM 128MBIT PAR 54TSOP II Winbond Electronics
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x| Memory Type | Volatile | Memory Format | DRAM |
|---|---|---|---|
| Technology | SDRAM | Memory Size | 128Mbit |
| Memory Organization | 8M X 16 | Memory Interface | Parallel |
| Clock Frequency | 166 MHz | Write Cycle Time - Word, Page | - |
| Access Time | 5 Ns | Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) | Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) | Supplier Device Package | 54-TSOP II |
| Part Number | Description | |
|---|---|---|
| W9812G6KH-6 | IC DRAM 128MBIT PAR 54TSOP II | |
| W9825G6KH-6 | IC DRAM 256MBIT PAR 54TSOP II | |
| W9864G6KH-6 | IC DRAM 64MBIT PAR 54TSOP II | |
| W9864G6KH-5 TR | IC DRAM 64MBIT PAR 54TSOP II | |
| W9864G6KH-6 TR | IC DRAM 64MBIT PAR 54TSOP II | |
| W9864G6KH-5 | IC DRAM 64MBIT PAR 54TSOP II | |
| W9812G6KH-5 TR | IC DRAM 128MBIT PAR 54TSOP II | |
| W9812G6KH-6 TR | IC DRAM 128MBIT PAR 54TSOP II | |
| W9864G6KH-6I TR | IC DRAM 64MBIT PAR 54TSOP II | |
| W9812G6KH-5 | IC DRAM 128MBIT PAR 54TSOP II | |
| W9812G6KH-6I TR | IC DRAM 128MBIT PAR 54TSOP II | |
| W9812G6KH-6I | IC DRAM 128MBIT PAR 54TSOP II | |
| W9825G6KH-5 TR | IC DRAM 256MBIT PAR 54TSOP II | |
| W9825G6KH-6 TR | IC DRAM 256MBIT PAR 54TSOP II | |
| W9864G6KH-6I | IC DRAM 64MBIT PAR 54TSOP II | |
| W9825G6KH-5 | IC DRAM 256MBIT PAR 54TSOP II | |
| W9825G6KH-6I TR | IC DRAM 256MBIT PAR 54TSOP II | |
| W9825G6KH-6I | IC DRAM 256MBIT PAR 54TSOP II | |
| W9864G6IH-6 | IC DRAM 64MBIT PAR 54TSOP II | |
| W9812G6IH-6 | IC DRAM 128MBIT PAR 54TSOP II | |
| W9825G6EH-6 | IC DRAM 256MBIT PAR 54TSOP II | |
| W9864G6JH-6I | IC DRAM 64MBIT PAR 54TSOP II | |
| W9812G6JH-6I | IC DRAM 128MBIT PAR 54TSOP II | |
| W9825G6JH-6I | IC DRAM 256MBIT PAR 54TSOP II | |
| MD56V62160M-7TAZ0AX | IC DRAM 64MBIT PAR 54TSOP II | |
| W9864G6JH-5 | IC DRAM 64MBIT PAR 54TSOP II | |
| W9812G6JH-5 | IC DRAM 128MBIT PAR 54TSOP II | |
| W9825G6JH-6 TR | IC DRAM 256MBIT PAR 54TSOP II | |
| W9825G6JH-6I TR | IC DRAM 256MBIT PAR 54TSOP II |
Product Details
Description
W9812G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words x 4 banks x 16 bits. W9812G6KH delivers a data bandwidth of up to 200M words per second. To fully comply with the personal computer industrial standard, W9812G6KH is sorted into the following speed grades: -5, -5I, -5J, -6, -6I, -6J and -75.
Features
3.3V ± 0.3V Power Supply
Up to 200 MHz Clock Frequency
2,097,152 Words 4 banks 16 bits organization
Self Refresh Mode
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and full page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Power Down Mode
Auto-precharge and Controlled Precharge
4K Refresh Cycles/64 mS, @ -40°C ≤ TA ≤ 85°C
4K Refresh Cycles/16 mS, @ -40°C ≤ TA ≤ 105°C
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Winbond Electronics |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Tube Alternate Packaging |
| Package-Case | 54-TSOP (0.400", 10.16mm Width) |
| Operating-Temperature | 0°C ~ 70°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 3 V ~ 3.6 V |
| Supplier-Device-Package | 54-TSOP II |
| Memory Capacity | 128M (8M x 16) |
| Memory-Type | SDRAM |
| Speed | 166MHz |
| Format-Memory | RAM |

