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MT29F256G08CKCDBJ5-6R:D IC FLASH 256GBIT PAR 132TBGA Micron Technology Inc.

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xProduct Details
Memory Type | Non-Volatile | Memory Format | FLASH |
---|---|---|---|
Technology | FLASH - NAND (MLC) | Memory Size | 256Gbit |
Memory Organization | 32G X 8 | Memory Interface | Parallel |
Clock Frequency | 167 MHz | Write Cycle Time - Word, Page | - |
Access Time | - | Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | 0°C ~ 70°C (TA) | Mounting Type | Surface Mount |
Package / Case | - | Supplier Device Package | 132-TBGA (12x18) |
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Part Number | Description | |
---|---|---|
MT29F256G08CKCDBJ5-6R:D | IC FLASH 256GBIT PAR 132TBGA | |
MT29F256G08CKEDBJ5-12:D | IC FLASH 256GBIT PAR 132TBGA | |
MT29F256G08CMCABJ2-10RZ:A | IC FLASH 256GBIT PAR 132TBGA | |
MT29F128G08AMCABJ2-10Z:A | IC FLASH 128GBIT PAR 132TBGA | |
MT29F256G08CKCDBJ5-6R:D TR | IC FLASH 256GBIT PAR 132TBGA | |
MT29F256G08CKEDBJ5-12:D TR | IC FLASH 256GBIT PAR 132TBGA | |
MT29F256G08CMCDBJ5-6R:D TR | IC FLASH 256GBIT PAR 132TBGA | |
MT29F256G08CMCABJ2-10RZ:A TR | IC FLASH 256GBIT PAR 132TBGA | |
MT29F128G08AMCABJ2-10Z:A TR | IC FLASH 128GBIT PAR 132TBGA | |
MT29F128G08AKCDBJ5-6:D TR | IC FLSH 128GBIT PARALLEL 132TBGA | |
MT29F128G08AKCDBJ5-6IT:D TR | IC FLASH 128GBIT PAR 132TBGA | |
MT29F128G08AMCDBJ5-6:D TR | IC FLASH 128GBIT PAR 132TBGA | |
MT29F128G08AMCDBJ5-6IT:D TR | IC FLASH 128GBIT PAR 132TBGA | |
MT29F256G08CKEDBJ5-12IT:D TR | IC FLASH 256GBIT PAR 132TBGA | |
MT29F256G08CMEDBJ5-12:D TR | IC FLASH 256GBIT PAR 132TBGA | |
MT29F256G08CMEDBJ5-12IT:D TR | IC FLASH 256GBIT PAR 132TBGA | |
MT29F512G08EMCBBJ5-10:B TR | IC FLASH 512GBIT PAR 132TBGA | |
MT29F512G08EMCBBJ5-10ES:B TR | IC FLASH 512GBIT PAR 132TBGA | |
MT29F256G08CMCDBJ5-6ITR:D | IC FLASH 256GBIT PAR 132TBGA | |
MT29F128G08AKEDBJ5-12:D | IC FLSH 128GBIT PARALLEL 132TBGA | |
MT29F512G08EMCBBJ5-10:B | IC FLASH 512GBIT PAR 132TBGA | |
MT29F512G08EKCBBJ5-6:B | IC FLASH 512GBIT PAR 132TBGA | |
MT29F512G08EMCBBJ5-6:B | IC FLASH 512GBIT PAR 132TBGA | |
MT29F512G08EMCBBJ5-6:B.001 | IC FLASH 512GBIT PAR 132TBGA | |
MT29F128G08AMCDBJ5-6ITR:D | IC FLASH 128GBIT PAR 132TBGA | |
MT29F128G08AMEDBJ5-12:D | IC FLASH 128GBIT PARALLEL 83MHZ | |
MT29F128G08AMCDBJ5-6ITR:D TR | IC FLASH 128GBIT PAR 132TBGA | |
MT29F128G08AMEDBJ5-12:D TR | IC FLASH 128GBIT PAR 132TBGA | |
MT29F128G08AMCDBJ5-6IT:D | IC FLASH 128GBIT PAR 132TBGA | |
MT29F128G08AKCDBJ5-6IT:D | IC FLSH 128GBIT PARALLEL 132TBGA | |
MT29F256G08CMCDBJ5-6R:D | IC FLASH 256GBIT PAR 132TBGA |
Product Description
Product Details
General Description
Micron NAND Flash devices include an asynchronous data interface for high-perform ance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asyn chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).
Features
• Open NAND Flash Interface (ONFI) 2.2-compliant1• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
–
tRC/tWC: 20ns (MIN)
• Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
• RESET (FFh) required as first command after power
on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Micron Technology Inc. |
Product Category | Memory ICs |
Series | - |
Packaging | * Alternate Packaging |
Package-Case | * |
Operating-Temperature | 0°C ~ 70°C (TA) |
Interface | Parallel |
Voltage-Supply | 2.7 V ~ 3.6 V |
Supplier-Device-Package | * |
Memory Capacity | 256G (32G x 8) |
Memory-Type | FLASH - NAND |
Speed | - |
Format-Memory | FLASH |
Descriptions
FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 167MHz
NAND FLASH, MLC NAND
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