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MT28F128J3FS-12 ET TR IC FLASH 128MBIT PARALLEL 64FBGA Micron Technology Inc.

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xProduct Details
Memory Type | Non-Volatile | Memory Format | FLASH |
---|---|---|---|
Technology | FLASH | Memory Size | 128Mbit |
Memory Organization | 16M X 8, 8M X 16 | Memory Interface | Parallel |
Clock Frequency | - | Write Cycle Time - Word, Page | - |
Access Time | 120 Ns | Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TA) | Mounting Type | Surface Mount |
Package / Case | 64-FBGA | Supplier Device Package | 64-FBGA (10x13) |
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Part Number | Description | |
---|---|---|
MT28F128J3FS-12 ET TR | IC FLASH 128MBIT PARALLEL 64FBGA | |
MT28F320J3FS-11 ET TR | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F640J3FS-115 ET TR | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F128J3BS-12 ET | IC FLASH 128MBIT PARALLEL 64FBGA | |
MT28F128J3BS-12 ET TR | IC FLASH 128MBIT PARALLEL 64FBGA | |
MT28F128J3BS-12 MET | IC FLASH 128MBIT PARALLEL 64FBGA | |
MT28F128J3BS-12 MET TR | IC FLASH 128MBIT PARALLEL 64FBGA | |
MT28F128J3FS-12 MET | IC FLASH 128MBIT PARALLEL 64FBGA | |
MT28F128J3FS-12 MET TR | IC FLASH 128MBIT PARALLEL 64FBGA | |
MT28F320J3BS-11 ET | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F320J3BS-11 ET TR | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F320J3BS-11 GMET | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F320J3BS-11 GMET TR | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F320J3BS-11 MET | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F320J3BS-11 MET TR | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F320J3FS-11 GMET | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F320J3FS-11 GMET TR | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F320J3FS-11 MET | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F320J3FS-11 MET TR | IC FLASH 32MBIT PARALLEL 64FBGA | |
MT28F640J3BS-115 ET | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3BS-115 ET TR | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3BS-115 GMET | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3BS-115 GMET TR | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3BS-115 MET | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3BS-115 MET TR | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3FS-115 GMET | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3FS-115 GMET TR | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3FS-115 MET | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3FS-115 MET TR | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3FS-115 XMET | IC FLASH 64MBIT PARALLEL 64FBGA | |
MT28F640J3FS-115 XMET TR | IC FLASH 64MBIT PARALLEL 64FBGA |
Product Description
Product Details
GENERAL DESCRIPTION
The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks.Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks.
These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility.
FEATURES
• x8/x16 organization• One hundred twenty-eight 128KB erase blocks (128Mb)
Sixty-four 128KB erase blocks (64Mb)
Thirty-two 128KB erase blocks (32Mb)
• VCC, VCCQ, and VPEN voltages:
2.7V to 3.6V VCC operation
2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation
2.7V to 3.6V, or 5V VPEN application programming
• Interface Asynchronous Page Mode Reads:
150ns/25ns read access time (128Mb)
120ns/25ns read access time (64Mb)
110ns/25ns read access time (32Mb)
• Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition
• Security OTP block feature Permanent block locking (Contact factory for availability)
• Industry-standard pinout
• Inputs and outputs are fully TTL-compatible
• Common Flash Interface (CFI) and Scalable Command Set
• Automatic write and erase algorithm
• 4.7µs-per-byte effective programming time using write buffer
• 128-bit protection register
64-bit unique device identifier
64-bit user-programmable OTP cells
• 100,000 ERASE cycles per block
• Automatic suspend options:
Block Erase Suspend-to-Read
Block Erase Suspend-to-Program
Program Suspend-to-Read
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Micron Technology Inc. |
Product Category | Memory ICs |
Series | - |
Packaging | Cut Tape (CT) |
Package-Case | 64-FBGA |
Operating-Temperature | -40°C ~ 85°C (TA) |
Interface | Parallel |
Voltage-Supply | 2.7 V ~ 3.6 V |
Supplier-Device-Package | 64-FBGA (10x13) |
Memory Capacity | 128M (16M x 8, 8M x 16) |
Memory-Type | FLASH |
Speed | 120ns |
Format-Memory | FLASH |
Descriptions
FLASH Memory IC 128Mb (16M x 8, 8M x 16) Parallel 120ns 64-FBGA (10x13)
NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 120ns 64-Pin FBGA T/R
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