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IS42S16100H-7BL-TR IC DRAM 16MBIT PAR 60TFBGA ISSI, Integrated Silicon Solution Inc
| Brand Name | ISSI, Integrated Silicon Solution Inc |
|---|---|
| Model Number | IS42S16100H-7BL-TR |
| Minimum Order Quantity | 1 |
| Price | Based on current price |
| Packaging Details | anti-static bag & cardboard box |
| Delivery Time | 3-5 work days |
| Payment Terms | T/T |
| Supply Ability | In stock |
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xProduct Details
| Memory Type | Volatile | Memory Format | DRAM |
|---|---|---|---|
| Technology | SDRAM | Memory Size | 16Mbit |
| Memory Organization | 1M X 16 | Memory Interface | Parallel |
| Clock Frequency | 143 MHz | Write Cycle Time - Word, Page | - |
| Access Time | 5.5 Ns | Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) | Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA | Supplier Device Package | 60-TFBGA (6.4x10.1) |
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| Part Number | Description | |
|---|---|---|
| IS42S16100H-7BL-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100H-6BL-TR | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100H-7BL | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100H-7BLI-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100H-6BL | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100H-6BLI-TR | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100H-7BLI | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100H-6BLI | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| AS4C4M16SA-7B2CNTR | IC DRAM 64MBIT PAR 60FBGA | |
| AS4C4M16SA-7B2CN | IC DRAM 64MBIT PAR 60FBGA | |
| IS42S16400J-7B2LI-TR | IC DRAM 64MBIT PAR 60TFBGA | |
| IS45S16100H-7BLA1-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16400J-7B2LI | IC DRAM 64MBIT PAR 60TFBGA | |
| IS45S16100H-7BLA1 | IC DRAM 16MBIT PAR 60TFBGA | |
| IS45S16100H-7BLA2-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS45S16100H-7BLA2 | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100C1-7B | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100C1-7B-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100C1-7BI | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100C1-7BI-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100C1-7BL | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100C1-7BL-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100C1-7BLI | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100C1-7BLI-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16400D-6BL | IC DRAM 64MBIT PAR 60MINIBGA | |
| IS42S16400D-6BL-TR | IC DRAM 64MBIT PAR 60MINIBGA | |
| IS42S16400D-7BL | IC DRAM 64MBIT PAR 60MINIBGA | |
| IS42S16400D-7BL-TR | IC DRAM 64MBIT PAR 60MINIBGA | |
| IS42S16400D-7BLI | IC DRAM 64MBIT PAR 60MINIBGA | |
| IS42S16400D-7BLI-TR | IC DRAM 64MBIT PAR 60MINIBGA | |
| IS42S16100E-7BL | IC DRAM 16MBIT PAR 60TFBGA | |
| IS45S16100C1-7BLA1 | IC DRAM 16MBIT PAR 60MINIBGA | |
| IS42S16100E-7B | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100E-7BLI | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100E-7BI | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16400D-6BLI | IC DRAM 64MBIT PAR 60MINIBGA | |
| IS42S16100E-7BL-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS45S16100C1-7BLA1-TR | IC DRAM 16MBIT PAR 60MINIBGA | |
| IS42S16100E-7B-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100E-7BLI-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100E-7BI-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16400D-6BLI-TR | IC DRAM 64MBIT PAR 60MINIBGA | |
| IS42S16100E-6BL | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100E-6BLI | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100E-6BLI-TR | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100E-6BL-TR | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100F-6BL | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100F-6BLI | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100F-6BLI-TR | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100F-6BL-TR | IC DRAM 16MBIT PARALLEL 60TFBGA | |
| IS42S16100F-7BL | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100F-7BLI | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100F-7BLI-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS42S16100F-7BL-TR | IC DRAM 16MBIT PAR 60TFBGA | |
| IS45S16100E-7BLA1 | IC DRAM 16MBIT PAR 60TFBGA | |
| IS45S16100E-7BLA1-TR | IC DRAM 16MBIT PAR 60TFBGA |
Product Description
Product Details
DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
FEATURES
• Clock frequency: 166, 143, 100 MHz• Fully synchronous; all signals referenced to a positive clock edge
• Two banks can be operated simultaneously and independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 4096 refresh cycles every 128 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Package 400-mil 50-pin TSOP II
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ISSI |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Tape & Reel (TR) Alternate Packaging |
| Package-Case | 60-TFBGA |
| Operating-Temperature | 0°C ~ 70°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 3 V ~ 3.6 V |
| Supplier-Device-Package | 60-TFBGA (6.4x10.1) |
| Memory Capacity | 16M (1M x 16) |
| Memory-Type | SDRAM |
| Speed | 143MHz |
| Format-Memory | RAM |
Descriptions
SDRAM Memory IC 16Mb (1M x 16) Parallel 143MHz 5.5ns 60-TFBGA (6.4x10.1)
16M, 3.3V, SDRAM, 1MX16, 143MH
DRAM 16M, 3.3V, SDRAM 1Mx16, 143Mhz,RoHS
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