STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor
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xOperating Voltage | 55 Vdc | Maximum Forward Gate Current | 2 MA |
---|---|---|---|
Gate--Source Voltage | S -8 To +0.5 Vdc | Drain--Source Voltage | +200 Vdc |
Storage Temperature Range | -65 To +150 | Case Operating Temperature | +150 |
Operating Junction Temperature | +225 |
Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor
Description
The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz.
It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package.
It can support CW, pulse or any modulated signal.
There is no guarantee of performance when this part is used outside of stated frequencies.
- Typical Class AB Single--Carrier W--CDMA Characterization Performance:
VDD = 50 Vdc, IDQ = 20 mA, Input Signal PAR = 10 dB @ 0.01% Probability on CCDF.
(On innogration application board with device soldered)
Freq | Pout | CCDF | Ppeak | Ppeak | ACRP | Gain | Eff |
---|---|---|---|---|---|---|---|
3300 | 33.00 | 9.12 | 42.12 | 16.3 | -35.9 | 16.8 | 27.8 |
3400 | 32.99 | 9.04 | 42.03 | 16.0 | -36.3 | 17.1 | 27.8 |
3500 | 33.00 | 8.92 | 41.92 | 15.6 | -37.1 | 17.4 | 28.7 |
3600 | 32.97 | 8.90 | 41.88 | 15.4 | -38.1 | 17.5 | 27.4 |
3700 | 33.00 | 8.97 | 41.97 | 15.7 | -39.4 | 17.4 | 27.4 |
3800 | 33.01 | 8.90 | 41.91 | 15.5 | -40.7 | 16.6 | 25.7 |
Applications
- 5G, 4G wireless infrastructure
- Wideband or narrowband power amplifier
- Test instruments
- Civil pulse radar
- Jammer